Electronic Component Market News – Week 1 of October
Memory Chips
1. Samsung expects HBM to account for nearly 30% of its DRAM wafer capacity by 2027, with around 70% of capacity locked in by long-term AI contracts, tightening supply of standard DRAM continuously.
2. Memory contract prices have risen for 20 consecutive months. DRAM prices climbed 20%–30% quarter-on-quarter in Q3, while NAND Flash rose over 15%. Institutions forecast further price hikes in Q4.
3. Micron delivered better-than-expected financial results. Its CEO projects an even tighter memory supply-demand balance in 2027 and 2028, with strong HBM demand lasting through 2028.
4. Nanya Technology plans another hike in DRAM contract prices, with a maximum increase of up to 20%. Its Q3 revenue jumped 61.9% quarter-on-quarter, hitting a record quarterly high.
5. SK Hynix has completed verification of HBM5 on TSMC’s 3D Fabric platform and received TSMC’s Annual Partner Award.
Passive Components
1. Samsung Electro-Mechanics secured a full-year long-term MLCC order worth 285.6 billion won for AI servers. An AI server uses 10–13 times more MLCCs than a regular server.
2. Murata has phased out low-margin general-purpose MLCC part numbers. AI and automotive-grade high-capacitance models see price increases of 15%–35%, with lead times extended to 20–26 weeks.
3. Taiyo Yuden and TDK have entered a partnership to jointly develop high-end MLCCs and inductors for AI servers.
Other Updates
1. A new round of price hikes kicks off for power semiconductors. onsemi’s new pricing takes effect on October 10, and domestic manufacturers follow up with the second round of adjustments.
2. TSMC will raise prices for mature processes by 3%–10% in 2027; its 2nm process is reportedly set for another 6%–8% price increase. PMICs and MCUs are poised for a second wave of price rises.
3. The 15th Five-Year Plan prioritizes advancing high-end development of electronic components. Skyworks completed the acquisition of Qorvo for 147.5 billion yuan, marking consolidation among RF leaders.