【MLCC Capacitors】
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Yageo states that the prosperity is expected to continue into 2028. Downstream customers are locking in substantial long‑term production capacity to avoid supply disruption risks. The shipment proportion of standard‑grade products in the current quarter has risen from 80% to over 90%, with lead times extended to 12‑16 months.
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Murata has not yet issued a new official price‑increase notice. Nevertheless, its book‑to‑bill (BB) ratio remains high. It gives priority to fulfilling long‑term agreements for major overseas AI clients, while tightening allocations for spot orders and small‑to‑medium‑size customers.
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Book‑to‑bill (BB) Ratio: Murata at 1.30, Samsung Electro‑Mechanics at 1.31, Taiyo Yuden at 1.25. Order volumes significantly exceed shipment capacities.
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Per‑unit MLCC consumption for AI servers has increased sharply. For the new‑generation Rubin cabinet, the MLCC value per cabinet has jumped from USD 1530 to USD 4320. MLCC has become the third‑largest cost item in the AI server BOM, only after GPUs and memory chips.
【Memory NAND / DRAM】
I. 【NAND Flash】
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SK Hynix ‑ Dalian Plant: Multiple media reports dated August 13‑15 state that SK Hynix Solidigm has resumed construction of Fab 2 at its Dalian NAND complex. The new production line is planned for a monthly wafer input of 50,000 mature‑process wafers. Equipment will be moved in in November 2026, with mass production slated for H1 2027. Combined with the existing 100,000‑wafer‑per‑month capacity of Fab 1, the total capacity of the Dalian site will rise by roughly 50%.
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Yangtze Memory Technologies Corp (YMTC): According to Counterpoint’s 2026 Q2 report, YMTC holds a 14% global shipment market share for NAND flash, ranking among the world’s top three for the first time. It narrowly overtakes Kioxia, trailing only Samsung (25%) and SK Hynix (22%).
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Kioxia and SanDisk: They have launched the 9th‑generation 2Tb QLC 3D NAND flash, featuring a 6‑plane architecture and a 4.8Gb/s interface rate. It delivers improved bandwidth and energy efficiency versus the prior generation, targeting AI servers and high‑end consumer‑grade memory markets.
II. 【DRAM】
Patent Risk Alert: US‑based Netlist has initiated a Section 337 investigation related to DRAM products, naming Micron, Lenovo and others as respondents. Domestic upstream and downstream memory‑industry participants need to monitor case developments, prepare contingency plans in advance, and guard against export‑restriction risks in the North American market.